Description:

The X-ray Topography (XRT) image of a 30 mm diameter silicon carbide wafer reveals dislocations, sub-surface defects and grain boundaries.  XRT can be applied for imaging distorted or defective single crystals and identifying sub-surface defects and residual strain in wafers and patterned devices (Copyright QinetiQ).

Industry Sectors:
Semiconductor, Photonics/Optoelectronics, Microelectronics, MicroSystems/MEMS

Techniques:
X-ray Topography

Keywords:
defects, failure analysis