Wafer Crystal Inspection by XRT
X-ray Topography maps crystal defects in a silicon carbide wafer
Description:
The X-ray Topography (XRT) image of a 30 mm diameter silicon carbide wafer reveals dislocations, sub-surface defects and grain boundaries. XRT can be applied for imaging distorted or defective single crystals and identifying sub-surface defects and residual strain in wafers and patterned devices (Copyright QinetiQ).
Industry Sectors:
Semiconductor, Photonics/Optoelectronics, MicroSystems/MEMS
Techniques:
X-ray Topography
Keywords:
defects, failure analysis