TEM Semiconductor Cross Section and Defect Imaging
TEM image from an InSb/AlInSb semiconductor multilayer cross-section.
Description:
Transmission Electron Microscopy (TEM) of cross-sectioned samples allows accurate layer thickness measurement and defect imaging. This example shows TEM imaging of a compound semiconductor multi-layer for individual layer thickness measurement and assessment of interface roughness and defect and levels. The yellow arrow pinpoints a misfit dislocation (Copyright QinetiQ).
Industry Sectors:
Semiconductor, Photonics/Optoelectronics, Microelectronics, MicroSystems/MEMS
Techniques:
Transmission Electron Microscopy
Keywords:
Defect Imaging, failure analysis