Contamination in metallization feature: SIMS imaging
Secondary Ion Mass Spectrometry map showing the distribution of oxygen contamination at an interface in a patterned metallization feature
Description:
Secondary Ion Mass Spectrometry (SIMS) can determine elemental concentration as a function of depth, and can also image the local distribution of elements on surfaces and at different depths within materials and devices. The left image highlights the location of regions of oxygen contamination (green areas) at the interface in a patterned metallisation feature. (Copyright QinetiQ)
Industry Sectors:
Semiconductor
Techniques:
Secondary Ion Mass Spectrometry
Keywords:
elemental imaging and analysis, contaminant detection, depth profiling, failure analysis