Secondary Ion Mass Spectrometry
Secondary Ion Mass Spectrometry (SIMS) enables sensitive depth profiling over sample depths from a few nm up to tens of microns below the surface. Determination of elemental composition as a function of depth, identification of trace-level contaminants and dopants (with typical detection limits in the ppm – ppb range), and isotope ratio measurements, are key applications. The technique can be employed in depth profiling mode, in imaging mode to map spatial variations, or in microprobe mode for spot analysis of features or particles.
SIMS oxygen impurity depth profile through AlGaAs/GaAs device multilayer (Copyright QinetiQ Ltd.).
Key Information
- Dynamic SIMS giving elemental & trace composition as a function of depth
- Analysis area: 10 microns – 1 mm
- Detection limit: parts per million to parts per billion depending on material
- Depth resolution: down to 2 nanometres per decade change in signal
- Maximum depth: ~100 microns
- Elemental imaging/mapping
- Imaging resolution: sub micron
SIMS ion image of the oxygen atom contamination distribution within a patterned metallisation feature (Copyright QinetiQ Ltd.)
Common Applications
- Multilayer film analysis
- Interface analysis
- Dopant depth profiling
- Contamination identification
- Impurity concentration measurements
- Surface particle characterisation
- Isotopic measurements
CEMMNT Benefits
Application Notes
