Scanning Electron Microscopy (SEM)
Scanning Electron Microscopy (SEM) provides high-resolution, large depth-of-field imaging of solid materials, allowing visualisation and metrology of 3-D features, surfaces and cross-sections. Secondary- and backscattered- electrons are collected to build up images dominated by surface topography- and composition- related contrast respectively. The incident electrons also interact to produce fluorescent X-rays with element specific energies. Energy Dispersive X-ray Analysis (EDX) can be used to analyse these and provide local elemental analysis and mapping.
SEM image of MEMS structure
Key Information
- Scan area: 100 nm to 3 mm
- Magnification: 10X to 200,000X
- Resolution: ~5 nm using field-emission (FEG) - SEM instrument
- Standard imaging modes: secondary electron (SE), backscatter electron (BSE), energy dispersive X-ray analysis (EDX)
- Advanced imaging methods available: electron backscatter diffraction (EBSD), cathodoluminescence (CL)
Common Applications
- Surface morphology visualisation (applicable to most solid materials)
- Critical dimension measurement (microfabricated structures & devices)
- Particle size measurement and identification
- Defect and flaw analysis
- Cross-sectional applications: layer thickness measurement, multilayer analysis, sidewall profiling, feature widths, void / precipitate detection
- Semiconductor device imaging
CEMMNT Benefits
- Access to multiple SEM instruments
- Energy Dispersive X-ray Analysis (EDX) for local elemental analysis
- Extensive applications experience
- Fast turnaround service
Industry Sectors
Application Notes