Techniques
Scanning Electron Microscopy (SEM)

Scanning Electron Microscopy (SEM) provides high-resolution, large depth-of-field imaging of solid materials, allowing visualisation and metrology of 3-D features, surfaces and cross-sections. Secondary- and backscattered- electrons are collected to build up images dominated by surface topography- and composition- related contrast respectively. The incident electrons also interact to produce fluorescent X-rays with element specific energies. Energy Dispersive X-ray Analysis (EDX) can be used to analyse these and provide local elemental analysis and mapping. 

Scanning Electron Microscopy (SEM)

SEM image of MEMS structure

Key Information
  • Scan area: 100 nm to 3 mm
  • Magnification: 10X to 200,000X
  • Resolution: ~5 nm using field-emission (FEG) - SEM instrument
  • Standard imaging modes: secondary electron (SE), backscatter electron (BSE), energy dispersive X-ray analysis (EDX)
  • Advanced imaging methods available: electron backscatter diffraction (EBSD), cathodoluminescence (CL)
Common Applications
  • Surface morphology visualisation (applicable to most solid materials)
  • Critical dimension measurement (microfabricated structures & devices)
  • Particle size measurement and identification
  • Defect and flaw analysis
  • Cross-sectional applications: layer thickness measurement, multilayer analysis, sidewall profiling, feature widths, void / precipitate detection
  • Semiconductor device imaging
CEMMNT Benefits
  • Access to multiple SEM instruments
  • Energy Dispersive X-ray Analysis (EDX) for local elemental analysis
  • Extensive applications experience
  • Fast turnaround service
Industry Sectors
Application Notes